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- Manufacturer No：IDT71V3576S133PF
- Manufacturer：Integrated Device Technology (IDT)
- Category：Memory
- Datasheet：IDT71V3576S133PF
- SKU：11027061
- Description：GULL WING 3-STATE 2012 Parallel (Memory Format) Memory 70C 3.135V 4718592bit 0.03A
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User Guide
IDT71V3576S133PF Details
GULL WING 3-STATE 2012 Parallel (Memory Format) Memory 70C 3.135V 4718592bit 0.03A
IDT71V3576S133PF Specification Parameters
- Number of Functions: 1
- Surface Mount: YES
- Power Supplies: 3.3V
- Temperature Grade: COMMERCIAL
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Published: 2012
- Max Operating Temperature: 70°C
- Height Seated (Max): 1.6mm
- Number of Terminations: 100
- Terminal Pitch: 0.65mm
- Interface: Parallel
- Peak Reflow Temperature (Cel): 240
- Output Characteristics: 3-STATE
- Terminal Finish: Tin/Lead (Sn85Pb15)
- I/O Type: COMMON
- Supply Voltage-Min (Vsup): 3.135V
- Subcategory: SRAMs
- Package / Case: LQFP
- Additional Feature: PIPELINED ARCHITECTURE
- Memory Type: RAM, SRAM
- Standby Voltage-Min: 3.14V
- Access Time (Max): 4.2 ns
- Organization: 128KX36
- RoHS Status: Non-RoHS Compliant
- Supply Voltage: 3.3V
- Moisture Sensitivity Level (MSL): 3
- Pbfree Code: no
- JESD-609 Code: e0
- Technology: CMOS
- Time@Peak Reflow Temperature-Max (s): 20
- Reach Compliance Code: not_compliant
- Terminal Position: QUAD
- Pin Count: 100
- Memory Width: 36
- Min Operating Temperature: 0°C
- Width: 14mm
- Length: 20mm
- Operating Mode: SYNCHRONOUS
- Supply Voltage-Max (Vsup): 3.465V
- Frequency: 133MHz
- Standby Current-Max: 0.03A
- HTS Code: 8542.32.00.41
- ECCN Code: 3A991.B.2.A
- Supply Current-Max: 0.25mA
- JESD-30 Code: R-PQFP-G100
- Memory Density: 4718592 bit
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Integrated Device Technology (IDT) — Manufacturer Introduction
We are a world-wide leader in the designdevelopmentand marketing of silicon timing devices to the communications equipmentconsumerand business electronics industries.
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